Surface erosion and modification by highly charged ions.
Analyses were conducted of various models and mechanisms of highly charged ion (HCI) and swift-heavy ion energy transfer into a solid target, such as hollow atom formation, charge screening, neutralization, shock wave generation, crater formation, and sputtering. A plasma model of space charge neutralization based on impact ionization of semiconductors at high electric fields was developed and applied to analyze HCI impacts on Si and W. Surface erosions of semiconductor and metal surfaces caused by HCI bombardments were studied by using a molecular dynamics simulation method, and the results were compared with experimental sputtering data.
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC); Japanese Science Promotion Society funding
- DOE Contract Number:
- DE-AC02-06CH11357
- OSTI ID:
- 935285
- Report Number(s):
- ANL/AES/JA-61201; PLRAAN; TRN: US200815%%471
- Journal Information:
- Phys. Rev. A, Vol. 77, Issue Jun. 2008; ISSN 1050-2947
- Country of Publication:
- United States
- Language:
- ENGLISH
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