Combinatorial Screening of the Effect of Temperature on the Microstructure and Mobility of a High Performance Polythiophene Semiconductor

Journal Article · Mon Jan 01 00:00:00 EST 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2404934· OSTI ID:930035

Lucas, L; Delongchamp, D; Vogel, B; Lin, E; Fasolka, M; Fischer, D; Mcculloch, I; Heeney, M; Jabbour, G

Using a gradient combinatorial approach, the authors report the effects of temperature on the microstructure and hole mobility of poly(2,5-bis(3-dodecylthiophen-2yl)thieno[3,2-b]thiophene) thin films for application in organic field-effect transistors. The gradient heating revealed a detailed dependence on thermal history. Optimal heat treatment achieved mobilities as high as 0.3 cm{sup 2} V{sup -1} s{sup -1}. Mobility enhancement coincides with an increase in crystal domain size and orientation, all of which occur abruptly at a temperature closely corresponding to a bulk liquid crystal phase transition.

• Research Organization: Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source
• Sponsoring Organization: Doe - Office Of Science
• DOE Contract Number: DE-AC02-98CH10886
• OSTI ID: 930035
• Report Number(s): BNL-80653-2008-JA; APPLAB; TRN: US200822%%1269
• Journal Information: Applied Physics Letters, Vol. 90; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTALS
HEAT TREATMENTS
HEATING
HOLE MOBILITY
LIQUID CRYSTALS
MICROSTRUCTURE
MOBILITY
ORIENTATION
POLYMERS
SEMICONDUCTOR MATERIALS
SIZE
THIN FILMS
TRANSISTORS
national synchrotron light source