Plastic Deformation of Silicon Between 20 degrees C and 425 Degrees C

Journal Article · Mon Jan 01 00:00:00 EST 2007 · Physica Status Solidi C

DOI:https://doi.org/10.1002/pssc.200675480· OSTI ID:929982

Rabier, J; Renault, P; Eyidi, D; Demenet, J; Chen, J; Couvy, H; Wang, L

Mechanical data have been obtained on silicon single crystal under hydrostatic pressure between room temperature and 450 {sup o}C. This temperature domain corresponds to the regime where perfect dislocations control plastic deformation. This was achieved using a D-DIA apparatus in the synchrotron beam of NSLS. Stress strain curves were deduced from X Ray diffraction and sample imaging under 5 GPa and a strain rate of 2.5 10{sup -5} s{sup -1}. Yield stresses as a function of temperature exhibit different temperature dependence when deformation is controlled by perfect dislocations.

• Research Organization: Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source
• Sponsoring Organization: Doe - Office Of Science
• DOE Contract Number: DE-AC02-98CH10886
• OSTI ID: 929982
• Report Number(s): BNL-80590-2008-JA; TRN: US0806680
• Journal Information: Physica Status Solidi C, Vol. 4, Issue 8; ISSN 1610-1634
• Country of Publication: United States
• Language: English

Related Subjects

43 PARTICLE ACCELERATORS
BEAMS
DEFORMATION
DIAGRAMS
DISLOCATIONS
FUNCTIONS
HYDROSTATICS
MONOCRYSTALS
NSLS
PLASTICS
SILICON
STRAIN RATE
STRAINS
STRESSES
SYNCHROTRON RADIATION
TEMPERATURE DEPENDENCE
X-RAY DIFFRACTION
national synchrotron light source