InAs quantum well Hall devices for room-temperature detection of single magnetic biomolecular labels.
Hall sensors with cross width of {approx}1 {micro}m were fabricated from InAs/AlSb quantum well semiconductor heterostructures containing two-dimensional electron gas. The room-temperature device characteristics were examined by Hall effect and electronic noise measurements along with analytical calculations. In the low-frequency range, from 20 Hz to 1.6 kHz, the noise-equivalent magnetic field resolution was found to be limited by 1/f and generation-recombination noise from 22 to 3.5 {micro}T/{radical}Hz. The corresponding noise-equivalent magnetic moment resolution reached 10{sub {mu}{sub B}}{sup 6}/{radical}Hz at {approx}700 Hz and was even lower at higher frequencies. Using a phase-sensitive measurement technique, detection of a single 1.2 {micro}m diameter bead, suitable for biological applications, was achieved with a signal to noise ratio of {approx}33.3 dB, as well as detection of six 250 nm beads with a signal to noise of {approx}2.3 dB per bead. The work demonstrates the efficacy of InAs quantum well Hall devices for application in high sensitivity detection of single magnetic biomolecular labels.
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC); NSF-NIRT
- DOE Contract Number:
- DE-AC02-06CH11357
- OSTI ID:
- 929248
- Report Number(s):
- ANL/MSD/JA-59626; JAPIAU; TRN: US200815%%164
- Journal Information:
- J. Appl. Phys., Vol. 102, Issue Aug. 1, 2007; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- ENGLISH
Similar Records
Ultrasmall particle detection using a submicron Hall sensor
Quantum-well Hall devices in Si-delta-doped Al{sub 0.25}Ga{sub 0.75}As/GaAs and pseudomorphic Al{sub 0.25}Ga{sub 0.75}As/In{sub 0.25}Ga{sub 0.75}As/GaAs heterostructures grown by LP-MOCVD: Performance comparisons