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Title: X-ray absorption near edge structure investigation ofvanadium-doped ZnO thin films

Journal Article · · Thin Solid Films

X-ray absorption near edge structure spectroscopy has beenused to investigate the electronic and atomic structure of vanadium-dopedZnO thin films obtained by reactive plasma. The results show no sign ofmetallic clustering of V atoms, +4 oxidation state of V, 4-foldcoordination of Zn in the films, and a secondary phase (possibly VO2)formation at 15 percent V doping. O K edge spectra show V 3d-O 2p and Zn4d-O 2p hybridization, and suggest that V4+ acts as electron donor thatfills the sigma* band.

Research Organization:
COLLABORATION - Surface ScienceLaboratory/KFUPM/Saudi Arabia
DOE Contract Number:
DE-AC02-05CH11231
OSTI ID:
928781
Report Number(s):
LBNL-62447; R&D Project: A580SS; BnR: KC0204016
Journal Information:
Thin Solid Films, Vol. 515; Related Information: Journal Publication Date: 05/11/2006
Country of Publication:
United States
Language:
English

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