X-ray absorption near edge structure investigation ofvanadium-doped ZnO thin films
X-ray absorption near edge structure spectroscopy has beenused to investigate the electronic and atomic structure of vanadium-dopedZnO thin films obtained by reactive plasma. The results show no sign ofmetallic clustering of V atoms, +4 oxidation state of V, 4-foldcoordination of Zn in the films, and a secondary phase (possibly VO2)formation at 15 percent V doping. O K edge spectra show V 3d-O 2p and Zn4d-O 2p hybridization, and suggest that V4+ acts as electron donor thatfills the sigma* band.
- Research Organization:
- COLLABORATION - Surface ScienceLaboratory/KFUPM/Saudi Arabia
- DOE Contract Number:
- DE-AC02-05CH11231
- OSTI ID:
- 928781
- Report Number(s):
- LBNL-62447; R&D Project: A580SS; BnR: KC0204016
- Journal Information:
- Thin Solid Films, Vol. 515; Related Information: Journal Publication Date: 05/11/2006
- Country of Publication:
- United States
- Language:
- English
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