Electrical switching in metallic carbon nanotubes

Journal Article · Fri Apr 15 00:00:00 EDT 2005 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.95.216602· OSTI ID:919748

Son, Young-Woo; Ihm, Jisoon; Cohen, Marvin L; Louie, Steven G; Choi, Hyoung Joon

We present first-principles calculations of quantumtransport that show that the resistance of metallic carbon nanotubes canbe changed dramatically with homogeneous transverse electric fields ifthe nanotubes have impurities or defects. The change of the resistance ispredicted to range over more than 2 orders of magnitude withexperimentally attainable electric fields. This novel property has itsorigin that backscattering of conduction electrons by impurities ordefects in the nanotubes is strongly dependent on the strength and/ordirection of the applied electric fields. We expect this property to opena path to new device applications of metallic carbonnanotubes.

• Research Organization: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
• Sponsoring Organization: USDOE Director. Office of Science. Basic EnergySciences
• DOE Contract Number: DE-AC02-05CH11231
• OSTI ID: 919748
• Report Number(s): LBNL-59703; PRLTAO; R&D Project: 506501; BnR: KC0202030; TRN: US0806477
• Journal Information: Physical Review Letters, Vol. 95; Related Information: Journal Publication Date: 18 Nov 2005; ISSN 0031-9007
• Country of Publication: United States
• Language: English

Related Subjects

75
BACKSCATTERING
CARBON
DEFECTS
ELECTRIC FIELDS
ELECTRONS
IMPURITIES
NANOTUBES
ORIGIN
TRANSPORT