Auger and X-ray PhotoelectronSpectroscopy Study of the Density ofOxygen States in Bismuth, Aluminum, Silicon, and Uranium Oxides
The correlation of relative partial electron density at the oxygen ions with the intensity of Auger O KLL lines in Bi2O3, Al2O3, SiO2 and UO2 has been determined by Auger and X-ray photoelectron spectroscopic methods. The dependence of the relative intensities of Auger O KL2-3L2-3 and O KL1L2-3-lines was characterized from the binding energy of O 1s electrons. The electron density of the outer valence levels of oxygen increases as the relative intensities of Anger OKL2-3L2-3 and O KL1L2-3-lines increase. The fine structure observed in the O KL1L2-3 Auger and the O 2s XPS spectra has been explained by the formation of inner valence molecular orbitals (IVMO) from the interaction of electrons of the O 2s and filled metal ns shells.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Director, Office of Energy Research
- DOE Contract Number:
- DE-AC02-05CH11231
- OSTI ID:
- 898843
- Report Number(s):
- LBNL-42664; JESRAW; TRN: US0701704
- Journal Information:
- Journal of Electron Spectroscopy and Related Phenomena, Vol. 103, Issue SI; Related Information: Journal Publication Date: 06/1999; ISSN 0368-2048
- Country of Publication:
- United States
- Language:
- English
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