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Title: Voltage-Matched, Monolithic, Multi-Band-Gap Devices

Abstract

Monolithic, tandem, photonic cells include at least a first semiconductor layer and a second semiconductor layer, wherein each semiconductor layer includes an n-type region, a p-type region, and a given band-gap energy. Formed within each semiconductor layer is a string of electrically connected photonic sub-cells. By carefully selecting the numbers of photonic sub-cells in the first and second layer photonic sub-cell string(s), and by carefully selecting the manner in which the sub-cells in a first and second layer photonic sub-cell string(s) are electrically connected, each of the first and second layer sub-cell strings may be made to achieve one or more substantially identical electrical characteristics.

Inventors:
;
Publication Date:
Research Org.:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
894202
Patent Number(s):
U.S. Patent No. 7,095,050 B2
Application Number:
TRN: US200701%%60
Assignee:
NREL
DOE Contract Number:  
AC36-99-GO10337
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 14 SOLAR ENERGY; SEMICONDUCTOR DEVICES; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; DESIGN; ENERGY GAP; VOLTAGE-MATCHED; MONOLITHIC; MULTI-BAND-GAP DEVICES; Solar Energy - Photovoltaics; Basic Sciences; Materials Science and Semiconductors

Citation Formats

Wanlass, M W, and Mascarenhas, A. Voltage-Matched, Monolithic, Multi-Band-Gap Devices. United States: N. p., 2006. Web.
Wanlass, M W, & Mascarenhas, A. Voltage-Matched, Monolithic, Multi-Band-Gap Devices. United States.
Wanlass, M W, and Mascarenhas, A. 2006. "Voltage-Matched, Monolithic, Multi-Band-Gap Devices". United States.
@article{osti_894202,
title = {Voltage-Matched, Monolithic, Multi-Band-Gap Devices},
author = {Wanlass, M W and Mascarenhas, A},
abstractNote = {Monolithic, tandem, photonic cells include at least a first semiconductor layer and a second semiconductor layer, wherein each semiconductor layer includes an n-type region, a p-type region, and a given band-gap energy. Formed within each semiconductor layer is a string of electrically connected photonic sub-cells. By carefully selecting the numbers of photonic sub-cells in the first and second layer photonic sub-cell string(s), and by carefully selecting the manner in which the sub-cells in a first and second layer photonic sub-cell string(s) are electrically connected, each of the first and second layer sub-cell strings may be made to achieve one or more substantially identical electrical characteristics.},
doi = {},
url = {https://www.osti.gov/biblio/894202}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Aug 22 00:00:00 EDT 2006},
month = {Tue Aug 22 00:00:00 EDT 2006}
}