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Title: Sol-gel deposition of buffer layers on biaxially textured metal substances

Patent ·
OSTI ID:873039

A method is disclosed for forming a biaxially textured buffer layer on a biaxially oriented metal substrate by using a sol-gel coating technique followed by pyrolyzing/annealing in a reducing atmosphere. This method is advantageous for providing substrates for depositing electronically active materials thereon.

Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
DOE Contract Number:
AC05-96OR22464
Assignee:
Lockheed Martin Energy Research Corporation (Oak Ridge, TN)
Patent Number(s):
US 6077344
OSTI ID:
873039
Country of Publication:
United States
Language:
English

References (8)

Origin of Orientation in Sol-Gel-Derived Lead Titanate Films journal May 1993
Preparation of lanthanum aluminate thin films by a sol-gel procedure using alkoxide precursors journal March 1994
The Structure of Thin Oxide Films Formed on Nickel Crystals journal January 1969
Properties of YBa2Cu3O7−δ thick films on flexible buffered metallic substrates journal October 1995
Epitaxially grown sputtered LaAlO 3 films journal November 1990
LaAlO3 thin films deposited on silicon and sapphire as buffer layers for YBa2Cu3O7?x journal January 1994
High critical current density superconducting tapes by epitaxial deposition of YBa2Cu3Ox thick films on biaxially textured metals journal September 1996
Sol-gel Synthesis of LaAlO 3 ; Epitaxial Growth of LaAlO 3 Thin Films on SrTiO 3 (100) journal April 1997