Thin film solar cell including a spatially modulated intrinsic layer
One or more thin film solar cells in which the intrinsic layer of substantially amorphous semiconductor alloy material thereof includes at least a first band gap portion and a narrower band gap portion. The band gap of the intrinsic layer is spatially graded through a portion of the bulk thickness, said graded portion including a region removed from the intrinsic layer-dopant layer interfaces. The band gap of the intrinsic layer is always less than the band gap of the doped layers. The gradation of the intrinsic layer is effected such that the open circuit voltage and/or the fill factor of the one or plural solar cell structure is enhanced.
- Publication Date:
- OSTI Identifier:
- Report Number(s):
- US 4816082
US patent application 07/087,264
- DOE Contract Number:
- Resource Type:
- Country of Publication:
- United States
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