Thin film solar cell including a spatially modulated intrinsic layer

Patent · Tue Mar 28 00:00:00 EST 1989

OSTI ID:866893

Guha, Subhendu ^[1]; Yang, Chi-Chung ^[1]; Ovshinsky, Stanford R ^[2]

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1. Troy, MI
2. Bloomfield Hills, MI

One or more thin film solar cells in which the intrinsic layer of substantially amorphous semiconductor alloy material thereof includes at least a first band gap portion and a narrower band gap portion. The band gap of the intrinsic layer is spatially graded through a portion of the bulk thickness, said graded portion including a region removed from the intrinsic layer-dopant layer interfaces. The band gap of the intrinsic layer is always less than the band gap of the doped layers. The gradation of the intrinsic layer is effected such that the open circuit voltage and/or the fill factor of the one or plural solar cell structure is enhanced.

• DOE Contract Number: ZB-0-60030-4
• Assignee: Energy Conversion Devices, Inc. (Troy, MI)
• Patent Number(s): US 4816082
• Application Number: 07/087,264
• OSTI ID: 866893
• Country of Publication: United States
• Language: English

Related Subjects

film
solar
cell
including
spatially
modulated
intrinsic
layer
cells
substantially
amorphous
semiconductor
alloy
material
band
gap
portion
narrower
graded
bulk
thickness
region
removed
layer-dopant
interfaces
doped
layers
gradation
effected
circuit
voltage
fill
factor
plural
structure
enhanced
film solar
intrinsic layer
cell structure
cell including
circuit voltage
band gap
solar cell
solar cells
doped layer
alloy material
semiconductor alloy
amorphous semiconductor
portion including
substantially amorphous
gap portion
doped layers
fill factor
/136/257/