Optical studies of heterointerfacial growth interrupts in type-II GaAs/AlAs superlattices by time resolved photoluminescence imaging

Journal Article · Sat Jul 01 00:00:00 EDT 1995 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.587809· OSTI ID:83920

Chang, T; Fu, L P; Bacalzo, F T; Gilliland, G D ^[1]; Wolford, D J ^[2]; Bajaj, K K; Antonelli, A; Chen, R ^[1]; Klem, J; Hafich, M ^[3]

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1. Physics Department, Emory University, Atlanta, Georgia 30322 (United States)
2. Physics Department and Microelectronics Research Center, Iowa State University, Ames, Iowa 50011 (United States)
3. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

We have quantitatively characterized the heterointerfaces in type-II GaAs/AlAs short-period structures with various types of growth interrupts. The quality of the heterointerfaces is governed by two factors: the magnitude of the potential fluctuations or interface roughness and the density of nonradiative defect centers incorporated at the heterointerfaces during growth. We have quantified these aspects of the heterointerfaces through photoluminescence (PL), PL time-decay, and time-resolved PL-imaging measurements. We find that growth interrupts at the {ital normal} heterointerfaces significantly improves the quality of the interfaces over growth with {ital no} {ital interrupts} in regard to the interface roughness. Further, the transport of the excitons along the heterointerfaces may be explained by interface roughness induced scattering. We also find that growth interrupts at only the {ital normal} interfaces substantially reduces the nonradiative trap densities at the heterointerfaces. {copyright} {ital 1995} {ital American} {ital Vacuum} {ital Society}

• Research Organization: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 83920
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 13, Issue 4; Other Information: PBD: Jul 1995
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SUPERLATTICES
PHOTOLUMINESCENCE
GALLIUM ARSENIDES
ALUMINIUM ARSENIDES
MOLECULAR BEAM EPITAXY
INTERFACES
TIME RESOLUTION
TEMPERATURE RANGE 0000-0013 K