Nucleation and growth of CVD diamond films on patterned substrates
The interest in using CVD diamond in the fabrication of microelectro-mechanical components has steadily increased over the last few years. Typical technology for manufacturing such components involves the use of molds patterned in silicon or silicon dioxide, which are filled by diamond deposition. The degree of conformality of the CVD film and the characteristics of the diamond-substrate interface becomes critical for the successful fabrication and performance of such devices. We have investigated the growth of CVD diamond films on patterned substrates using a microwave plasma assisted deposition reactor. In particular the use of seed layers to enhance nucleation on horizontal and vertical walls as well as to promote complete filling of narrow trenches is investigated. Scanning electron microscopy is used to characterize the nucleation and growth of the diamond films.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- Advanced Projects (US)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 823742
- Report Number(s):
- LBNL-51942; R&D Project: Z2PA09; TRN: US200415%%623
- Journal Information:
- Diamond and Related Materials, Vol. 12, Issue 8; Other Information: Journal Publication Date: 08/2003; PBD: 20 Dec 2002
- Country of Publication:
- United States
- Language:
- English
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