SciTech Connect

Title: Atomic Scale Structure of Ultrathin Magnetic Multilayers and Correlation with Resistance and Giant Magnetoresistance and Spin-Dependent Tunneling

Atomic Scale Structure of Ultrathin Magnetic Multilayers and Correlation with Resistance and Giant Magnetoresistance and Spin-Dependent Tunneling ORNL's advanced characterization capabilities were used to determine the physical and chemical structure of magnetic multilayer films intended for application in non-volatile magnetic random access memory devices and as magnetic sensors. ORNL modeling capabilities were used to incorporate this information into a first-principles based tool that can be used to model the magnetic and transport properties of these films. This modeling capability should be useful for understanding and optimizing novel magnetoelectronic devices.
Authors:
Publication Date:
OSTI Identifier:OSTI ID: 777628
Report Number(s):C/ORNL97-0477
TRN: AH200118%%16
DOE Contract Number:AC05-96OR22464
Resource Type:Technical Report
Resource Relation:Other Information: PBD: 14 Feb 2001
Research Org:Oak Ridge National Lab., TN (US)
Sponsoring Org:US Department of Energy (US)
Country of Publication:United States
Language:English
Subject: 36 MATERIALS SCIENCE; 42 ENGINEERING; MAGNETIC MATERIALS; MAGNETORESISTANCE; MEMORY DEVICES; MONITORS; PHYSICAL PROPERTIES; CHEMICAL PROPERTIES; MATHEMATICAL MODELS