InGaAs/GaAs quantum dot interdiffiusion induced by cap layer overgrowth
Conference
·
OSTI ID:775135
The effect of thermal treatment during and after growth of InGaAs/GaAs quantum dot (QD) structures was studied. Transmission electron microscopy and atomic force microscopy confirmed the presence of interacting QDs, as was expected from analysis of temperature dependence of QD photoluminescence (PL) peak. The results indicate that the effect of post-growth annealing can be similar to the effect of elevated temperature of capping layer growth. Both, these thermal treatments can lead to a similar In and Ga interdiffiusion resulting in a similar blue-shift of QD PL peak.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Director, Office of Science (US)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 775135
- Report Number(s):
- LBNL-45981; R&D Project: 513340; TRN: AH200120%%427
- Resource Relation:
- Conference: 2000 Materials Research Society Spring Meeting, San Francisco, CA (US), 04/24/2000--04/28/2000; Other Information: PBD: 28 Jun 2000
- Country of Publication:
- United States
- Language:
- English
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