Microstructure and thermal stability of transition metal nitrides and borides on GaN
Conference
·
OSTI ID:775134
Microstructure and thermal stability of ZrN/ZrB2 bilayer deposited on GaN have been studied using transmission electron microscopy methods (TEM) and secondary ion mass spectrometry (SIMS). It has been demonstrated that annealing of the contact structure at 1100 C in N2 atmosphere does not lead to any observable metal/ semiconductor interaction. In contrast, a failure of the integrity of ZrN/ZrB2 metallization at 800 C, when the heat treatment is performed in O2 ambient has been observed.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 775134
- Report Number(s):
- LBNL-45980; R&D Project: 43BY01; TRN: AH200120%%426
- Resource Relation:
- Conference: 2000 Materials Research Society Spring Meeting, San Francisco, CA (US), 04/24/2000--04/28/2000; Other Information: PBD: 28 Jun 2000
- Country of Publication:
- United States
- Language:
- English
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