Measurement of the linear polarization of channeling radiation in silicon and diamond

Journal Article · Sat Jul 01 00:00:00 EDT 1995 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.52.771· OSTI ID:76440

Rzepka, M; Buschhorn, G; Diedrich, E; Kotthaus, R; Kufner, W; Roessl, W; Schmidt, K H ^[1]; Hoffmann-Stascheck, P; Genz, H; Nething, U; Richter, A ^[2]; Sellschop, J P.F. ^[3]

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1. Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut), 80805 Muenchen (Germany)
2. Institut fuer Kernphysik, Technische Hochschule Darmstadt, 64289 Darmstadt (Germany)
3. University of the Witwatersrand, 2050 Johannesburg (South Africa)

Utilizing 90{degree} Compton scattering the linear polarization of channeling radiation produced at the superconducting accelerator S-DALINAC with 62 MeV electrons in silicon and diamond has been measured in the energy range between 50 and 400 keV. Planar channeling radiation due to transitions involving transversal bound as well as unbound states is completely linearly polarized perpendicular to the channeling plane. Axial channeling radiation does not show linear polarization.

• OSTI ID: 76440
• Journal Information: Physical Review, B: Condensed Matter, Vol. 52, Issue 2; Other Information: PBD: 1 Jul 1995
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
SILICON
ELECTRON CHANNELING
DIAMONDS
MEV RANGE 10-100
X RADIATION
KEV RANGE 10-100
KEV RANGE 100-1000
POLARIZATION
COMPTON EFFECT