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Title: Selective excitation of the yellow luminescence of GaN

Abstract

The yellow luminescence of n-type GaN has been studied with selective excitation using a combination of Ar ion and dye lasers. Narrower structures whose peak energies follow the excitation photon energy over the width of the yellow luminescence have been observed. Unlike the yellow luminescence excited by above band gap excitations, these fine structures exhibits thermal activated quenching behavior. We propose that these fine structures are due to emission occurring at complexes of shallow donors and deep acceptors which can be resonantly excited by photons with energies below the band gap. The activation energy deduced from their intensity is that for delocalization of electrons out of the complexes. Our results therefore suggest that there is more than one recombination channel (usually assumed to be due to distant donor-acceptor pairs) to the yellow luminescence in GaN.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Director, Office of Science (US)
OSTI Identifier:
764349
Report Number(s):
LBNL-44298
R&D Project: 5062; TRN: US0101112
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Conference
Resource Relation:
Conference: 20th International Conference on Defects in Semiconductors, Berkeley, CA (US), 07/26/1999--07/30/1999; Other Information: PBD: 1 Jul 1999
Country of Publication:
United States
Language:
English
Subject:
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS; ACTIVATION ENERGY; DEFECTS; DYE LASERS; ELECTRONS; EXCITATION; FINE STRUCTURE; LUMINESCENCE; PHOTONS; QUENCHING; RECOMBINATION; LUMINESCENCE GAN

Citation Formats

Colton, J S, Yu, P Y, Teo, K L, Weber, E R, Grzegory, I, and Uchida, K. Selective excitation of the yellow luminescence of GaN. United States: N. p., 1999. Web.
Colton, J S, Yu, P Y, Teo, K L, Weber, E R, Grzegory, I, & Uchida, K. Selective excitation of the yellow luminescence of GaN. United States.
Colton, J S, Yu, P Y, Teo, K L, Weber, E R, Grzegory, I, and Uchida, K. 1999. "Selective excitation of the yellow luminescence of GaN". United States. https://www.osti.gov/servlets/purl/764349.
@article{osti_764349,
title = {Selective excitation of the yellow luminescence of GaN},
author = {Colton, J S and Yu, P Y and Teo, K L and Weber, E R and Grzegory, I and Uchida, K},
abstractNote = {The yellow luminescence of n-type GaN has been studied with selective excitation using a combination of Ar ion and dye lasers. Narrower structures whose peak energies follow the excitation photon energy over the width of the yellow luminescence have been observed. Unlike the yellow luminescence excited by above band gap excitations, these fine structures exhibits thermal activated quenching behavior. We propose that these fine structures are due to emission occurring at complexes of shallow donors and deep acceptors which can be resonantly excited by photons with energies below the band gap. The activation energy deduced from their intensity is that for delocalization of electrons out of the complexes. Our results therefore suggest that there is more than one recombination channel (usually assumed to be due to distant donor-acceptor pairs) to the yellow luminescence in GaN.},
doi = {},
url = {https://www.osti.gov/biblio/764349}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Jul 01 00:00:00 EDT 1999},
month = {Thu Jul 01 00:00:00 EDT 1999}
}

Conference:
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