Formation of super'' As-rich GaAs(100) surfaces by high temperature exposure to arsine

Journal Article · Mon Feb 17 00:00:00 EST 1992 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.106510· OSTI ID:7281883

Banse, B A; Creighton, J R ^[1]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

We report that arsine exposures between 100 and 350 {degree}C will produce super'' As-rich surfaces (arsenic coverages of up to {similar to}1.7 monolayers (ML, where 1 ML=6.26{times}10{sup 14} atoms cm{sup {minus}2})) of GaAs(100) that exhibit a {ital c}(4{times}4) low energy electron diffraction pattern. Temperature programmed desorption studies show that after AsD{sub 3} exposures of up to 2.6{times}10{sup 6} L (1 L=1{times}10{sup {minus}6} Torr s) to the Ga-stabilized surface, three excess As desorption speaks are observed with maxima at 440, 480, and 570 {degree}C. As{sub 4} desorption is detected from the lowest temperature state, while the other states desorb primarily as As{sub 2}. The significance of these results for the understanding of the atomic layer epitaxy process is addressed.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 7281883
• Journal Information: Applied Physics Letters; (United States), Vol. 60:7; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
GALLIUM ARSENIDES
MOLECULAR BEAM EPITAXY
ARSENIC ADDITIONS
CHEMICAL REACTIONS
CHEMICAL VAPOR DEPOSITION
DESORPTION
ELECTRON DIFFRACTION
SURFACE PROPERTIES
TEMPERATURE DEPENDENCE
ALLOYS
ARSENIC ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
COHERENT SCATTERING
DEPOSITION
DIFFRACTION
EPITAXY
GALLIUM COMPOUNDS
PNICTIDES
SCATTERING
SORPTION
SURFACE COATING
360606* - Other Materials- Physical Properties- (1992-)
400201 - Chemical & Physicochemical Properties