Electron-beam controlled switching using quartz and polycrystalline ZnSe

Journal Article · Fri Apr 01 00:00:00 EST 1994 · IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/16.278513· OSTI ID:7275209

Jiang, W ^[1]; Zinsmeyer, K; Less, M; Kristiansen, M ^[2]; Schoenbach, K H ^[3]

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1. Nagaoka Univ. of Technology, Niigata (Japan). Lab. of Beam Technology
2. Texas Tech Univ., Lubbock, TX (United States). Dept. of Electrical Engineering
3. Old Dominion Univ., Norfolk, VA (United States). Physical Electronics Research Inst.

Results of electron-beam controlled switching experiments with switch samples of quartz crystal and polycrystalline zinc selenide (ZnSe) are presented. For switch samples of both materials, drastic reductions of the switch resistance were induced by the electron beam. The quartz sample showed very fast temporal response (less than 1 ns) with potential applicability for current control. The ZnSe samples, on the other hand, showed longer current transients (on the order of 10 ns) with exponential development of the switch resistance after the electron beam pulse.

• OSTI ID: 7275209
• Journal Information: IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States), Vol. 41:4; ISSN 0018-9383
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SWITCHES
DESIGN
ELECTRICAL PROPERTIES
ELECTRON BEAMS
EXPERIMENTAL DATA
POWER SUPPLIES
QUARTZ
ZINC SELENIDES
BEAMS
CHALCOGENIDES
DATA
ELECTRICAL EQUIPMENT
ELECTRONIC EQUIPMENT
EQUIPMENT
INFORMATION
LEPTON BEAMS
MINERALS
NUMERICAL DATA
OXIDE MINERALS
PARTICLE BEAMS
PHYSICAL PROPERTIES
SELENIDES
SELENIUM COMPOUNDS
ZINC COMPOUNDS
426000* - Engineering- Components
Electron Devices & Circuits- (1990-)