Properties of gallium arsenide
Properties of Gallium Arsenide' is a handbook of evaluated numeric data and reviewed knowledge distilled by those working at the frontiers of gallium arsenide research. In addition to providing numeric data on basic physical, electronic and optical properties, the book covers many device-related aspects of gallium arsenide. Carrier attributes (ionisation coefficients, concentration, mobility, diffusion etc), deep levels and defects are surveyed and related to the various growth techniques such as MBE, VPE, and MOCVD. Sections on surface structure, oxidation, interfaces and etching are of particular relevance to integrated circuit research. Especially important in the race to achieve commercially usable samples is a state-of-the-art survey on the infra-red imaging of defects in semi-insulating gallium arsenide produced by the liquid-encapsulated Czochralski process.
- OSTI ID:
- 7252632
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
GALLIUM ARSENIDES
CRYSTAL GROWTH METHODS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
INTEGRATED CIRCUITS
FABRICATION
SEMICONDUCTOR MATERIALS
CARRIER MOBILITY
CHARGE CARRIERS
COMMERCIALIZATION
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DATA ANALYSIS
ETCHING
IMAGE PROCESSING
INFRARED SPECTRA
INTERFACES
OXIDATION
RESEARCH PROGRAMS
SURFACE PROPERTIES
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL REACTIONS
ELECTRONIC CIRCUITS
GALLIUM COMPOUNDS
MATERIALS
MICROELECTRONIC CIRCUITS
MOBILITY
PNICTIDES
PROCESSING
SPECTRA
SURFACE FINISHING
360603* - Materials- Properties
420800 - Engineering- Electronic Circuits & Devices- (-1989)
360602 - Other Materials- Structure & Phase Studies