Spectrophotometric determination of traces of boron in high purity silicon

Journal Article · Sat Jul 01 00:00:00 EDT 1989 · Analytical Letters; (USA)

DOI:https://doi.org/10.1080/00032718908051225· OSTI ID:7247424

Parashar, D C; Sarkar, A K; Singh, N ^[1]

---

1. National Physical Lab., New Delhi (India)

A reddish brown complex is formed between boron and curcumin in concentrated sulfuric acid and glacial acetic acid mixture (1:1). The colored complex is highly selective and stable for about 3 hours and has the maximum absorbance at 545 nm. The sensitivity of the method is extremely high and the detection limit is 3 parts per billion based on 0.004 absorbance value. The interference of some of the important cations and anions relevant to silicon were studied and it is found that 100 fold excess of most of these cations and anions do not interfere in the determination of boron. The method is successfully employed for the determination of boron in silicon used in semiconductor devices. The results have been verified by standard addition method.

• OSTI ID: 7247424
• Journal Information: Analytical Letters; (USA), Vol. 22:8; ISSN 0003-2719
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
SILICON COMPOUNDS
CHEMICAL ANALYSIS
BORON
DATA ANALYSIS
EXPERIMENTAL DATA
MEASURING INSTRUMENTS
MEASURING METHODS
SEMICONDUCTOR MATERIALS
SPECTROSCOPY
TRACE AMOUNTS
DATA
ELEMENTS
INFORMATION
MATERIALS
NUMERICAL DATA
SEMIMETALS
360000* - Materials
360603 - Materials- Properties
400200 - Inorganic
Organic
& Physical Chemistry