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Title: Electron microscopy study of microvoid generation in molecular-beam epitaxy-grown silicon

Abstract

In a study of (100)Si growth by molecular-beam epitaxy, the authors have observed an interesting phenomenon associated with the breakdown of (100)-oriented growth at low temperatures (> {approximately}400C). Electron microscope imaging revealed that the (100) surface no longer remains planar but develops a series of cusps with (111) oriented facets. At the base of each cusp a small ({approximately}3nm) cylindrically shaped defect region is formed, but this is morphologically unstable and breaks down to form a linear array of spherical defects trailing behind the growing interface, aligned parallel to the growth direction. The similarities observed between these structures and those found in the unidirectional solidification of rod eutectoids or monotectoids are striking, although the scale of the microstructure in the present case is much smaller. From a series of electron microscopy experiments using both cross-sectional and plan-view specimen geometries it has been found that the cylindrical-spherical defects are microvoid regions. Furthermore, the microvoid defect structure was found to be stable as the epitaxial Si matrix transformed to the polycrystalline and amorphous states beyond and epitaxial critical thickness.

Authors:
; ; ;  [1]
  1. Inst. for Microstructural Sciences, Ottawa, Ontario (Canada)
OSTI Identifier:
7237819
Report Number(s):
CONF-901035-
Journal ID: ISSN 0734-211X; CODEN: JVTBD
Resource Type:
Conference
Journal Name:
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)
Additional Journal Information:
Journal Volume: 9:4; Conference: 37. national American Vacuum Society symposium, Toronto (Canada), 8-12 Oct 1990; Journal ID: ISSN 0734-211X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON; ELECTRON MICROSCOPY; MOLECULAR BEAM EPITAXY; AMORPHOUS STATE; CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTAL LATTICES; MORPHOLOGY; CRYSTAL STRUCTURE; ELEMENTS; EPITAXY; MICROSCOPY; SEMIMETALS; 360602* - Other Materials- Structure & Phase Studies

Citation Formats

Perovic, D D, Weatherly, G C, Noeel, J P, and Houghton, D C. Electron microscopy study of microvoid generation in molecular-beam epitaxy-grown silicon. United States: N. p., Web.
Perovic, D D, Weatherly, G C, Noeel, J P, & Houghton, D C. Electron microscopy study of microvoid generation in molecular-beam epitaxy-grown silicon. United States.
Perovic, D D, Weatherly, G C, Noeel, J P, and Houghton, D C. . "Electron microscopy study of microvoid generation in molecular-beam epitaxy-grown silicon". United States.
@article{osti_7237819,
title = {Electron microscopy study of microvoid generation in molecular-beam epitaxy-grown silicon},
author = {Perovic, D D and Weatherly, G C and Noeel, J P and Houghton, D C},
abstractNote = {In a study of (100)Si growth by molecular-beam epitaxy, the authors have observed an interesting phenomenon associated with the breakdown of (100)-oriented growth at low temperatures (> {approximately}400C). Electron microscope imaging revealed that the (100) surface no longer remains planar but develops a series of cusps with (111) oriented facets. At the base of each cusp a small ({approximately}3nm) cylindrically shaped defect region is formed, but this is morphologically unstable and breaks down to form a linear array of spherical defects trailing behind the growing interface, aligned parallel to the growth direction. The similarities observed between these structures and those found in the unidirectional solidification of rod eutectoids or monotectoids are striking, although the scale of the microstructure in the present case is much smaller. From a series of electron microscopy experiments using both cross-sectional and plan-view specimen geometries it has been found that the cylindrical-spherical defects are microvoid regions. Furthermore, the microvoid defect structure was found to be stable as the epitaxial Si matrix transformed to the polycrystalline and amorphous states beyond and epitaxial critical thickness.},
doi = {},
url = {https://www.osti.gov/biblio/7237819}, journal = {Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)},
issn = {0734-211X},
number = ,
volume = 9:4,
place = {United States},
year = {},
month = {}
}

Conference:
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