Schottky barrier heights for GaAs diodes fabricated at low temperatures
- Univ. of Wales, Cardiff (United Kingdom)
High-quality Schottky diodes have been fabricated by depositing several metals onto atomically clean molecular-beam epitaxy grown surfaces of GaAs(100) displaying (4 {times} 6) and c(4 {times} 4) reconstructed forms. Diodes have been made at temperatures of 80, 200, and 300 K and the barrier heights investigated by the current-voltage method at these temperatures and following temperature cycles. In all cases investigated, the Schottky barrier heights are large and similar to those for the same metals on GaAs (110) surfaces. These results are in complete contrast with those recently reported where soft x-ray photoemission and internal photoemission data for metals on GaAs (100) surfaces were interpreted in terms of the Schottky model.
- OSTI ID:
- 7237656
- Report Number(s):
- CONF-910115-; CODEN: JVTBD
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Vol. 9:4; Conference: 18. annual conference on physics and chemistry of semiconductor interfaces, Long Beach, CA (United States), 29 Jan - 1 Feb 1991; ISSN 0734-211X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GALLIUM ARSENIDES
SCHOTTKY EFFECT
SCHOTTKY BARRIER DIODES
FABRICATION
CRYSTAL LATTICES
DEPLETION LAYER
DOPED MATERIALS
ELECTRICAL PROPERTIES
METALS
MOLECULAR BEAM EPITAXY
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL STRUCTURE
ELEMENTS
EPITAXY
GALLIUM COMPOUNDS
LAYERS
MATERIALS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
TEMPERATURE RANGE
360606* - Other Materials- Physical Properties- (1992-)
360601 - Other Materials- Preparation & Manufacture