Ordering and disordering of doped Ga[sub 0. 5]In[sub 0. 5]P

Journal Article · Sun May 01 00:00:00 EDT 1994 · Journal of Electronic Materials (A.I.M.E. Metallurgical Society); (United States)

DOI:https://doi.org/10.1007/BF02671225· OSTI ID:7236255

Kurtz, S R; Olson, J M; Friedman, D J; Kibbler, A E; Asher, S ^[1]

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1. National Renewable Energy Lab., Golden, CO (United States)

The band gap of Ga[sub 0.5]In[sub 0.5]P is reported as a function of doping level and growth rate. The lowest band gaps are obtained for hole concentrations of about 2 x 10[sup 17] cm[sup [minus]3]. For samples doped p-type above 1 x 10[sup 18] cm[sup [minus]3], the band gap increases dramatically, regardless of growth rate. This effect is shown to be the result of disordering during growth rather than a change in the equilibrium surface structure with doping. The doping level dependence of the band gap of Ga[sub 0.5]In[sub 0.5]P samples grown at higher and lower growth rates differs for selenium and zinc doping even though the effects of high doping are the same for both dopants. 22 refs., 3 figs.

• DOE Contract Number: AC02-83CH10093
• OSTI ID: 7236255
• Journal Information: Journal of Electronic Materials (A.I.M.E. Metallurgical Society); (United States), Vol. 23:5; ISSN 0361-5235
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
74 ATOMIC AND MOLECULAR PHYSICS
SEMICONDUCTOR MATERIALS
ELECTRONIC STRUCTURE
ORDER-DISORDER TRANSFORMATIONS
SURFACE PROPERTIES
BAND THEORY
CRYSTAL DOPING
CRYSTAL GROWTH
DOPED MATERIALS
EQUILIBRIUM
GALLIUM PHOSPHIDES
HOLES
INDIUM PHOSPHIDES
SELENIUM
ZINC
ELEMENTS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
MATERIALS
METALS
PHASE TRANSFORMATIONS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMIMETALS
360602* - Other Materials- Structure & Phase Studies
664100 - Theory of Electronic Structure of Atoms & Molecules- (1992-)