Monolithic integrated photoreceiver for 1. 3--1. 55-. mu. m wavelengths: Association of a Schottky photodiode and a field-effect transistor on GaInP-GaInAs heteroepitaxy

Journal Article · Mon Aug 15 00:00:00 EDT 1988 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.341686· OSTI ID:7202295

Therani, A H; Decoster, D; Vilcot, J P; Razeghi, M

We present a monolithic integrated circuit associating a Schottky photodiode and a field-effect transistor which has been fabricated, for the first time, on Ga/sub 0.49/In/sub 0.51/P/Ga/sub 0.47/In/sub 0.53/As strained heteroepitaxial material. Static, dynamic, and noise properties of the Schottky photodiode, the field-effect transistor, and the integrated circuit have been investigated and are reported. As an example, dynamic responsivity up to 50 A/W can be achieved at 1.3-..mu..m wavelength for the integrated photoreceiver. The performance of the device is discussed, taking into account the integrated circuit design and the main characteristics of the material.

• Research Organization: Centre Hyperfrequences et Semiconducteurs, Unite Asociee au Centre National de la Recherche Scientifique 287, Universite des Sciences et Techniques de Lille-Flandres-Artois, 59655 Villeneuve d'Ascq Cedex, France
• OSTI ID: 7202295
• Journal Information: J. Appl. Phys.; (United States), Vol. 64:4
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
PHOTOELECTRIC EFFECT
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
INTEGRATED CIRCUITS
FABRICATION
AMPLIFICATION
FIELD EFFECT TRANSISTORS
LAYERS
PERFORMANCE TESTING
PHOTODIODES
SCHOTTKY EFFECT
ARSENIC COMPOUNDS
ARSENIDES
ELECTRONIC CIRCUITS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
MICROELECTRONIC CIRCUITS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOELECTROMAGNETIC EFFECTS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
TESTING
TRANSISTORS
360603* - Materials- Properties