Long term ionization response of several BiCMOS VLSIC technologies

Journal Article · Mon Jun 01 00:00:00 EDT 1992 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/23.277516· OSTI ID:7198450

Pease, R L ^[1]; Combs, W; Clark, S ^[2]

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1. Mission Research Corp., Albuquerque, NM (US)
2. Naval Weapons Support Center, Crane, IN (US)

BiCMOS is emerging as a strong competitor to CMOS for gate arrays and memories because of its performance advantages for the same feature size. In this paper, the authors examine the long term ionization response of five BiCMOS technologies by characterizing test structures which emphasize the various failure modes of CMOS and bipolar. The primary failure modes are found to be associated with the recessed field oxide isolation; edge leakage in the n channel MOSFETs and buried layer to buried layer leakage in the bipolar. The ionization failure thresholds for worst case bias were in the range of 5-20 Krad(Si) for both failure modes in all five technologies.

• OSTI ID: 7198450
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Vol. 39:3; ISSN 0018-9499
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
42 ENGINEERING
INTEGRATED CIRCUITS
RADIATION EFFECTS
MOS TRANSISTORS
FAILURE MODE ANALYSIS
MEMORY DEVICES
MOSFET
OXIDES
PERFORMANCE
SILICON
TECHNOLOGY ASSESSMENT
THRESHOLD ENERGY
X RADIATION
CHALCOGENIDES
ELECTROMAGNETIC RADIATION
ELECTRONIC CIRCUITS
ELEMENTS
ENERGY
FIELD EFFECT TRANSISTORS
IONIZING RADIATIONS
MICROELECTRONIC CIRCUITS
OXYGEN COMPOUNDS
RADIATIONS
SEMICONDUCTOR DEVICES
SEMIMETALS
SYSTEM FAILURE ANALYSIS
SYSTEMS ANALYSIS
TRANSISTORS
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems
426000 - Engineering- Components
Electron Devices & Circuits- (1990-)