Layerwise reaction at a buried interface

Journal Article · Mon Oct 26 00:00:00 EST 1992 · Physical Review Letters; (United States)

DOI:https://doi.org/10.1103/PhysRevLett.69.2539· OSTI ID:7196806

Bennett, P A; DeVries, B ^[1]; Robinson, I K; Eng, P J ^[2]

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1. Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States)
2. AT T Bell Laboratories, Murray Hill, New Jersey 07974 (United States)

X-ray diffraction was used to monitor the {ital in} {ital situ} reaction of Pd deposited on Si(111) at room temperature. An ordered silicide forms spontaneously beneath a poorly ordered overlayer. It is commensurate and strained at low coverage, but relaxes to an unstrained state above a critical thickness of 18 A. During both phases of growth sustained intensity oscillations are seen that correspond to a layerwise consumption of the substrate at the buried interface.

• DOE Contract Number: AC02-76CH00016
• OSTI ID: 7196806
• Journal Information: Physical Review Letters; (United States), Vol. 69:17; ISSN 0031-9007
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
PALLADIUM SILICIDES
EPITAXY
CRYSTAL GROWTH
IN-SITU PROCESSING
INTERFACES
STRESS RELAXATION
SYNCHROTRON RADIATION
X-RAY DIFFRACTION
BREMSSTRAHLUNG
COHERENT SCATTERING
DIFFRACTION
ELECTROMAGNETIC RADIATION
PALLADIUM COMPOUNDS
PROCESSING
RADIATIONS
RELAXATION
SCATTERING
SILICIDES
SILICON COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
665100* - Nuclear Techniques in Condensed Matter Physics - (1992-)