Selective protection of poly(tetra-fluoroethylene) from effects of chemical etching

Patent · Thu Nov 19 00:00:00 EST 1992

OSTI ID:7181639

Martinez, R J; Rye, R R

This patent describes a photolithographic method for treating an article formed of polymeric material comprises subjecting portions of a surface of the polymeric article to ionizing radiation; and then subjecting the surface to chemical etching. The ionizing radiation treatment according to the present invention minimizes the effect of the subsequent chemical etching treatment. Thus, selective protection from the effects of chemical etching can be easily provided. The present invention has particular applicability to articles formed of fluorocarbons, such as PTFE. The ionizing radiation employed in the method may comprise Mg(k[alpha]) X-rays or lower-energy electrons.

• Assignee: Dept. of Energy, Washington, DC (United States)
• Patent Number(s): US 5066565; A
• Application Number: PPN: US 7-330032; TRN: 92-037464
• OSTI ID: 7181639
• Resource Relation: Patent File Date: 29 Mar 1991
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
IONIZING RADIATIONS
INTERACTIONS
POLYMERS
PHYSICAL RADIATION EFFECTS
RADIATION HARDENING
CHEMICAL VAPOR DEPOSITION
ELECTRON BEAMS
ETCHING
PHOTOCHEMISTRY
X RADIATION
BEAMS
CHEMICAL COATING
CHEMISTRY
DEPOSITION
ELECTROMAGNETIC RADIATION
HARDENING
LEPTON BEAMS
PARTICLE BEAMS
RADIATION EFFECTS
RADIATIONS
SURFACE COATING
SURFACE FINISHING
360605* - Materials- Radiation Effects
665300 - Interactions Between Beams & Condensed Matter- (1992-)