SciTech Connect

Title: Determination of the strain field from an HREM image of a Si Lomer dislocation. [High-resolution electron microscopy (HREM)]

Determination of the strain field from an HREM image of a Si Lomer dislocation. [High-resolution electron microscopy (HREM)] A new approach to quantitative deformation characterization of high-resolution electron microscopy (HREM) defect images has been developed. The principle of this technique, (Computational Fourier Transform Deformation (CFTD)) is to extract an accurate displacement field about a defect from its HREM image using Fourier transformation procedures. The methodology's unique feature is to digitize the defect image and compute the Moire pattern, from which the displacement field is obtained, without the need for an external reference lattice image, normally associated with the interference phenomena. From this data, the displacement gradient can be calculated, which yields much information on the experimental deformation mechanics. One question that has arisen is whether different imaging conditions of the same defect affects the results of the CFM analysis. We have studied this problem by analyzing the strain components of simulated images of a Lomer dislocation in Si and present our findings here.
Authors: ; ; ; ; ;
Publication Date:
OSTI Identifier:OSTI ID: 7181326
Report Number(s):LBL-32129; CONF-920819--23
ON: DE92041176; CNN: N00014-90-J-1295; DMR-9002994
DOE Contract Number:AC03-76SF00098
Resource Type:Conference
Resource Relation:Conference: Annual meeting of the Electron Microscopy Society (EMS) of America, Boston, MA (United States), 16-21 Aug 1992; Other Information: Extended abstract
Research Org:Lawrence Berkeley Lab., CA (United States)
Sponsoring Org:DOE; DOD; NSF; USDOE, Washington, DC (United States); Department of Defense, Washington, DC (United States); National Science Foundation, Washington, DC (United States)
Country of Publication:United States
Language:English
Subject: 37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; 36 MATERIALS SCIENCE; DEFORMATION; ELECTRON MICROSCOPY; SILICON; DISLOCATIONS; FOURIER TRANSFORMATION; IMAGE PROCESSING; IMAGES; SIMULATION; STRAINS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; INTEGRAL TRANSFORMATIONS; LINE DEFECTS; MICROSCOPY; PROCESSING; SEMIMETALS; TRANSFORMATIONS 400101* -- Activation, Nuclear Reaction, Radiometric & Radiochemical Procedures; 360602 -- Other Materials-- Structure & Phase Studies; 360603 -- Materials-- Properties