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Title: Epitaxial InAs-coupled superconducting junctions

Abstract

Homoepitaxial {ital n}-type InAs-coupled superconducting junctions are investigated. The {ital n}-type channel layer on a {ital p}-type substrate has nearly the same mobility as bulk crystal and the layer can be isolated electrically from the substrate by the built-in potential at the {ital p}-{ital n} interface. As a result, the critical current-normal resistance ({ital I}{sub {ital C}}{ital R}{sub {ital N}}) product of the homoepitaxial {ital n}-type InAs-coupled junction is at least 30 times better than those of the bulk {ital n}-type ones. The coherence length {xi}{sub {ital N}} is calculated using the experimentally obtained carrier concentration, mobility, and effective mass. Temperature dependence of {ital I}{sub {ital C}} agrees with calculations based on the proximity effect theory which can be applied to the intermediate regime between the clean and dirty limits.

Authors:
; ;  [1]
  1. Electrical Communications Laboratories, Nippon Telegraph and Telephone Corporation, 3-9-11 Musashino-shi, Tokyo 180, Japan (JP)
Publication Date:
OSTI Identifier:
7166666
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics; (USA)
Additional Journal Information:
Journal Volume: 66:12; Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; SUPERCONDUCTING JUNCTIONS; CRITICAL CURRENT; COHERENCE LENGTH; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; INDIUM ARSENIDES; MOLECULAR BEAM EPITAXY; N-TYPE CONDUCTORS; PROXIMITY EFFECT; TEMPERATURE DEPENDENCE; ARSENIC COMPOUNDS; ARSENIDES; CURRENTS; DIMENSIONS; ELECTRIC CURRENTS; EPITAXY; INDIUM COMPOUNDS; JUNCTIONS; LENGTH; MATERIALS; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR MATERIALS; 426001* - Engineering- Superconducting Devices & Circuits- (1990-)

Citation Formats

Akazaki, T, Kawakami, T, and Nitta, J. Epitaxial InAs-coupled superconducting junctions. United States: N. p., 1989. Web. doi:10.1063/1.343594.
Akazaki, T, Kawakami, T, & Nitta, J. Epitaxial InAs-coupled superconducting junctions. United States. https://doi.org/10.1063/1.343594
Akazaki, T, Kawakami, T, and Nitta, J. 1989. "Epitaxial InAs-coupled superconducting junctions". United States. https://doi.org/10.1063/1.343594.
@article{osti_7166666,
title = {Epitaxial InAs-coupled superconducting junctions},
author = {Akazaki, T and Kawakami, T and Nitta, J},
abstractNote = {Homoepitaxial {ital n}-type InAs-coupled superconducting junctions are investigated. The {ital n}-type channel layer on a {ital p}-type substrate has nearly the same mobility as bulk crystal and the layer can be isolated electrically from the substrate by the built-in potential at the {ital p}-{ital n} interface. As a result, the critical current-normal resistance ({ital I}{sub {ital C}}{ital R}{sub {ital N}}) product of the homoepitaxial {ital n}-type InAs-coupled junction is at least 30 times better than those of the bulk {ital n}-type ones. The coherence length {xi}{sub {ital N}} is calculated using the experimentally obtained carrier concentration, mobility, and effective mass. Temperature dependence of {ital I}{sub {ital C}} agrees with calculations based on the proximity effect theory which can be applied to the intermediate regime between the clean and dirty limits.},
doi = {10.1063/1.343594},
url = {https://www.osti.gov/biblio/7166666}, journal = {Journal of Applied Physics; (USA)},
issn = {0021-8979},
number = ,
volume = 66:12,
place = {United States},
year = {Fri Dec 15 00:00:00 EST 1989},
month = {Fri Dec 15 00:00:00 EST 1989}
}