Growth of epitaxial thin films by pulsed laser ablation
Conference
·
OSTI ID:7165303
High-quality, high-temperature superconductor (HTSc) films can be grown by the pulsed laser ablation (PLA) process. This article provides a detailed introduction to the advantages and curent limitations of PLA for epitaxial film growth. Emphasis is placed on experimental methods and on exploitation of PLA to control epitaxial growth at either the unit cell or the atomic-layer level. Examples are taken from recent HTSc film growth. 33 figs, 127 refs. (DLC)
- Research Organization:
- Oak Ridge National Lab., TN (United States)
- Sponsoring Organization:
- USDOE; USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 7165303
- Report Number(s):
- CONF-920878-2; ON: DE92040515
- Resource Relation:
- Conference: International conference on crystal growth, San Diego, CA (United States), Aug 1992
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
HIGH-TC SUPERCONDUCTORS
DEPOSITION
THIN FILMS
EPITAXY
LASER RADIATION
LAYERS
MOLECULAR BEAM EPITAXY
PULSED IRRADIATION
REVIEWS
TECHNOLOGY ASSESSMENT
DOCUMENT TYPES
ELECTROMAGNETIC RADIATION
FILMS
IRRADIATION
RADIATIONS
SUPERCONDUCTORS
360201* - Ceramics
Cermets
& Refractories- Preparation & Fabrication
HIGH-TC SUPERCONDUCTORS
DEPOSITION
THIN FILMS
EPITAXY
LASER RADIATION
LAYERS
MOLECULAR BEAM EPITAXY
PULSED IRRADIATION
REVIEWS
TECHNOLOGY ASSESSMENT
DOCUMENT TYPES
ELECTROMAGNETIC RADIATION
FILMS
IRRADIATION
RADIATIONS
SUPERCONDUCTORS
360201* - Ceramics
Cermets
& Refractories- Preparation & Fabrication