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Title: Growth of epitaxial thin films by pulsed laser ablation

Conference ·
OSTI ID:7165303

High-quality, high-temperature superconductor (HTSc) films can be grown by the pulsed laser ablation (PLA) process. This article provides a detailed introduction to the advantages and curent limitations of PLA for epitaxial film growth. Emphasis is placed on experimental methods and on exploitation of PLA to control epitaxial growth at either the unit cell or the atomic-layer level. Examples are taken from recent HTSc film growth. 33 figs, 127 refs. (DLC)

Research Organization:
Oak Ridge National Lab., TN (United States)
Sponsoring Organization:
USDOE; USDOE, Washington, DC (United States)
DOE Contract Number:
AC05-84OR21400
OSTI ID:
7165303
Report Number(s):
CONF-920878-2; ON: DE92040515
Resource Relation:
Conference: International conference on crystal growth, San Diego, CA (United States), Aug 1992
Country of Publication:
United States
Language:
English