Lithium drifted silicon detector fabrication on gettered floating-zone silicon

Conference · Mon Aug 01 00:00:00 EDT 1994 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:7156067

Walton, J T; Wong, Y K; Derhacobian, N; Haller, E E ^[1]

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1. Lawrence Berkeley Lab., CA (United States)

A gettering procedure using phosphorus doped glass is shown to remove lithium-ion precipitation sites from p-type Floating-Zone (FZ) silicon. A model involving interaction between grown-in vacancies and oxidation-injected silicon interstitials is proposed to explain the gettering procedure. Examples of silicon lithium-drifted detectors fabricated on ungettering and gettered FZ silicons are presented.

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 7156067
• Report Number(s): CONF-931051-; CODEN: IETNAE; TRN: 94-023004
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Vol. 41:4Pt1; Conference: NSS-MIC '93: nuclear science symposium and medical imaging conference, San Francisco, CA (United States), 30 Oct - 6 Nov 1993; ISSN 0018-9499
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
LI-DRIFTED SI DETECTORS
FABRICATION
DIAGNOSTIC TECHNIQUES
DOPED MATERIALS
MATHEMATICAL MODELS
P-TYPE CONDUCTORS
ZONE MELTING
LI-DRIFTED DETECTORS
MATERIALS
MEASURING INSTRUMENTS
MELTING
PHASE TRANSFORMATIONS
RADIATION DETECTORS
SEMICONDUCTOR DETECTORS
SEMICONDUCTOR MATERIALS
SI SEMICONDUCTOR DETECTORS
440101* - Radiation Instrumentation- General Detectors or Monitors & Radiometric Instruments