Multistreamer regime of GaAs thyristor switching

Journal Article · Mon Aug 01 00:00:00 EDT 1994 · IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/16.297741· OSTI ID:7149033

Vainshtein, S N; Kilpelae, A J; Kostamovaara, J T; Myllylae, R A; Starobinets, S U; Zhilyaev, J V ^[1]

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1. Univ. of Oulu (Finland). Dept. of Electrical Engineering

GaAs bipolar thyristors have been used to obtain current pulses of over 100 A with rise times less than 600 ps and load resistance of approximately 0.4 [Omega]. The maximum voltage has been shown to exceeded 500 V in some cases. To interpret the experimental results a multichannel switch regime is proposed. Analysis of the experimental data suggests the possibility of a further increase in the maximum amplitude of the current pulse.

• OSTI ID: 7149033
• Journal Information: IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States), Vol. 41:8; ISSN 0018-9383
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SWITCHES
OPERATION
THYRISTORS
ELECTRIC DISCHARGES
EXPERIMENTAL DATA
GALLIUM ARSENIDES
LIMITING VALUES
PERFORMANCE
USES
ARSENIC COMPOUNDS
ARSENIDES
DATA
ELECTRICAL EQUIPMENT
EQUIPMENT
GALLIUM COMPOUNDS
INFORMATION
NUMERICAL DATA
PNICTIDES
SEMICONDUCTOR DEVICES
426000* - Engineering- Components
Electron Devices & Circuits- (1990-)