Chemoresistive gas sensor

Patent · Tue Jun 23 00:00:00 EDT 1987

OSTI ID:7148120

Hirschfeld, T B

A chemoresistive gas sensor is provided which has improved sensitivity. A layer of organic semiconductor is disposed between two electrodes which, in turn, are connected to a voltage source. High conductivity material is dispersed within the layer of organic semiconductor in the form of very small particles, or islands. The average interisland spacing is selected so that the predominant mode of current flow is by way of electron funneling. Adsorption of gaseous contaminant onto the layer of organic semiconductor modulates the tunneling current in a quantitative manner. 2 figs.

• DOE Contract Number: W-7405-ENG-48
• Assignee: Dept. of Energy, Washington, DC (United States)
• Patent Number(s): US 4674320; A
• Application Number: PPN: US 6-781543
• OSTI ID: 7148120
• Resource Relation: Patent File Date: 30 Sep 1985
• Country of Publication: United States
• Language: English

Related Subjects

37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
GASES
QUANTITATIVE CHEMICAL ANALYSIS
MEASURING INSTRUMENTS
DESIGN
OPERATION
ORGANIC SEMICONDUCTORS
SORPTION
SORPTIVE PROPERTIES
CHEMICAL ANALYSIS
FLUIDS
MATERIALS
SEMICONDUCTOR MATERIALS
SURFACE PROPERTIES
400102* - Chemical & Spectral Procedures