Annealing results on low-energy proton-irradiated GaAs solar cells
AlGaAs/GaAs solar cells with an approximately 0.5-..mu..m-thick Al/sub 0.85/Ga/sub 0.15/As window layer were irradiated using normal and isotropic incident protons having energies between 50 and 500 keV with fluence up to 1 x 10/sup 12/ protons/cm/sup 2/. The irradiated cells were annealed at temperatures between 150 and 300 /sup 0/C in nitrogen ambient. The annealing results reveal that significant recovery in spectral response at longer wavelengths occurred. However, the short-wavelength spectral response showed negligible annealing, irrespective of the irradiation energy and annealing conditions. This indicates that the damage produced near the AlGaAs/GaAs interface and the space-charge region anneals differently than damage produced in the bulk. This is explained by using a model in which the as-grown dislocations interact with irradiation-induced point defects to produce thermally stable defects.
- Research Organization:
- Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Pasadena, California 91109
- OSTI ID:
- 7088872
- Journal Information:
- J. Appl. Phys.; (United States), Vol. 64:9
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
14 SOLAR ENERGY
GALLIUM ARSENIDE SOLAR CELLS
FABRICATION
PHYSICAL RADIATION EFFECTS
ANNEALING
DAMAGE
DISLOCATIONS
GALLIUM ARSENIDES
PHOTOVOLTAIC EFFECT
PROTONS
RELIABILITY
TEMPERATURE EFFECTS
ARSENIC COMPOUNDS
ARSENIDES
BARYONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DIRECT ENERGY CONVERTERS
ELEMENTARY PARTICLES
EQUIPMENT
FERMIONS
GALLIUM COMPOUNDS
HADRONS
HEAT TREATMENTS
LINE DEFECTS
NUCLEONS
PHOTOELECTRIC CELLS
PHOTOELECTROMAGNETIC EFFECTS
PHOTOVOLTAIC CELLS
PNICTIDES
RADIATION EFFECTS
SOLAR CELLS
SOLAR EQUIPMENT
360605* - Materials- Radiation Effects
140501 - Solar Energy Conversion- Photovoltaic Conversion