Radiation damage of epitaxial CaF[sub 2] overlayers on Si(111) studied by photon-stimulated desorption: Formation of surface [ital F] centers

Journal Article · Fri Jul 01 00:00:00 EDT 1994 · Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States)

DOI:https://doi.org/10.1116/1.579106· OSTI ID:7085093

Chakarian, V; Durbin, T D; Varekamp, P R; Yarmoff, J A ^[1]

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1. Department of Physics, University of California, Riverside, California 92521 (United States) Materials Science Division, Lawrence Berkeley Laboratory, Berkeley, California 94720 (United States)

The effects of radiation damage at the surfaces of CaF[sub 2] films grown on Si(111) substrates have been studied and the electronic transitions responsible for the formation of surface [ital F] centers have been identified by photon-stimulated desorption and soft x-ray photoelectron spectroscopy. The dominant desorption channel for F[sup +] ions is a direct Auger-stimulated process following an electronic transition from Ca 3[ital p] to 3[ital d]-derived states above the CaF[sub 2] conduction band minimum. At the Si 2[ital p] edge, there is an indirect x-ray induced electron-stimulated desorption process that contributes only slightly to the desorption of F[sup +]. The changes in the kinetic energy distributions of the desorbing F[sup +] ions as a function of film thickness are also discussed.

• DOE Contract Number: AC02-76CH00016; AC03-76SF00098
• OSTI ID: 7085093
• Journal Information: Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States), Vol. 12:4; ISSN 0734-2101
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CALCIUM FLUORIDES
F CENTERS
DESORPTION
ENERGY-LEVEL TRANSITIONS
EPITAXY
PHOTOELECTRON SPECTROSCOPY
SILICON
SURFACES
X RADIATION
ALKALINE EARTH METAL COMPOUNDS
CALCIUM COMPOUNDS
CALCIUM HALIDES
COLOR CENTERS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTROMAGNETIC RADIATION
ELECTRON SPECTROSCOPY
ELEMENTS
FLUORIDES
FLUORINE COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
IONIZING RADIATIONS
POINT DEFECTS
RADIATIONS
SEMIMETALS
SORPTION
SPECTROSCOPY
VACANCIES
360605* - Materials- Radiation Effects