Impact-parameter dependent stopping powers for axially channeled and semichanneled MeV He ions in GaAs:Er

Kido, Y; Ikeda, A; Yamamoto, Y; Nakata, J; Yamaguchi, H; Takahei, K

doi:10.1103/PhysRevB.49.14387

Title: Impact-parameter dependent stopping powers for axially channeled and semichanneled MeV He ions in GaAs:Er

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Abstract

We have investigated the impact-parameter dependence of stopping powers for axially channeled and semichanneled MeV He ions in Er-sheet-doped GaAs epitaxial layers grown by molecular-beam epitaxy. Ion channeling analysis using 2.0 MeV He[sup +] coupled with the observation by transmission-electron microscope has revealed the formation of fine ErAs clusters, whose lattice constant shrinks and coincides exactly with that of the GaAs host. Thus the Er atoms take the position corresponding to the tetrahedral interstitial site of the GaAs lattice. The Er peak energies in the backscattering spectra strongly depend on the impact-parameter dependent stopping powers, in particular for the incidence along [110] and the directions slightly tilted from [110] and [100]. We divide the stopping power into two parts---contributions from outer electrons and from inner electrons of GaAs. The former is calculated from the dielectric response theory. For the latter, we consider four types of stopping powers dependent upon impact parameter; (1) Dettmann-Robinson theory, (2) the binary-encounter model, (3) the binary encounter combined with the local-density approximation, and (4) the extended-local-electron-density model. The Er peak energies observed are well reproduced employing model (3).

Authors:

Kido, Y; Ikeda, A; Yamamoto, Y ^[1]; Nakata, J ^[2]; Yamaguchi, H; Takahei, K ^[3]

Department of Physics, Faculty of Science and Engineering, Ritsumeikan University, Noji-cho, Kusatsu-shi, Shiga-ken, 525 (Japan)
NTT LSI Laboratories, 3-1, Wakamiya, Morinosato, Atsugi-shi, Kanagawa-ken, 243-01 (Japan)
NTT Basic Research Laboratories, 3-1, Wakamiya, Morinosato, Atsugi-shi, Kanagawa-ken, 243-01 (Japan)

Publication Date:: Sun May 15 00:00:00 EDT 1994

OSTI Identifier:: 7067902

Resource Type:: Journal Article

Journal Name:: Physical Review, B: Condensed Matter; (United States)

Additional Journal Information:: Journal Volume: 49:20; Journal ID: ISSN 0163-1829

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; GALLIUM ARSENIDES; ION CHANNELING; HELIUM IONS; STOPPING POWER; ERBIUM ADDITIONS; IMPACT PARAMETER; MEV RANGE; ALLOYS; ARSENIC COMPOUNDS; ARSENIDES; CHANNELING; CHARGED PARTICLES; ENERGY RANGE; ERBIUM ALLOYS; GALLIUM COMPOUNDS; IONS; PNICTIDES; RARE EARTH ADDITIONS; RARE EARTH ALLOYS; 665300* - Interactions Between Beams & Condensed Matter- (1992-)

Citation Formats


                    Kido, Y, Ikeda, A, Yamamoto, Y, Nakata, J, Yamaguchi, H, and Takahei, K. Impact-parameter dependent stopping powers for axially channeled and semichanneled MeV He ions in GaAs:Er.  United States: N. p., 1994. 
        Web.  doi:10.1103/PhysRevB.49.14387.

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                    Kido, Y, Ikeda, A, Yamamoto, Y, Nakata, J, Yamaguchi, H, & Takahei, K. Impact-parameter dependent stopping powers for axially channeled and semichanneled MeV He ions in GaAs:Er.  United States.  https://doi.org/10.1103/PhysRevB.49.14387

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                    Kido, Y, Ikeda, A, Yamamoto, Y, Nakata, J, Yamaguchi, H, and Takahei, K. 1994.  
        "Impact-parameter dependent stopping powers for axially channeled and semichanneled MeV He ions in GaAs:Er".  United States.  https://doi.org/10.1103/PhysRevB.49.14387.

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@article{osti_7067902,

  title        = {Impact-parameter dependent stopping powers for axially channeled and semichanneled MeV He ions in GaAs:Er},

  author       = {Kido, Y and Ikeda, A and Yamamoto, Y and Nakata, J and Yamaguchi, H and Takahei, K},

  abstractNote = {We have investigated the impact-parameter dependence of stopping powers for axially channeled and semichanneled MeV He ions in Er-sheet-doped GaAs epitaxial layers grown by molecular-beam epitaxy. Ion channeling analysis using 2.0 MeV He[sup +] coupled with the observation by transmission-electron microscope has revealed the formation of fine ErAs clusters, whose lattice constant shrinks and coincides exactly with that of the GaAs host. Thus the Er atoms take the position corresponding to the tetrahedral interstitial site of the GaAs lattice. The Er peak energies in the backscattering spectra strongly depend on the impact-parameter dependent stopping powers, in particular for the incidence along [110] and the directions slightly tilted from [110] and [100]. We divide the stopping power into two parts---contributions from outer electrons and from inner electrons of GaAs. The former is calculated from the dielectric response theory. For the latter, we consider four types of stopping powers dependent upon impact parameter; (1) Dettmann-Robinson theory, (2) the binary-encounter model, (3) the binary encounter combined with the local-density approximation, and (4) the extended-local-electron-density model. The Er peak energies observed are well reproduced employing model (3).},

  doi          = {10.1103/PhysRevB.49.14387},

  url          = {https://www.osti.gov/biblio/7067902},
  journal      = {Physical Review, B: Condensed Matter; (United States)},

  issn         = {0163-1829},

  number       = ,

  volume       = 49:20,

  place        = {United States},

  year         = {Sun May 15 00:00:00 EDT 1994},

  month        = {Sun May 15 00:00:00 EDT 1994}

}

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