Dynamic observations of interface propagation during silicon oxidation

Journal Article · Mon Mar 16 00:00:00 EST 1992 · Physical Review Letters; (United States)

DOI:https://doi.org/10.1103/PhysRevLett.68.1782· OSTI ID:7047768

Ross, F M; Gibson, J M ^[1]

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1. AT T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974 (United States)

We have observed in real time the nature and motion of the silicon(111)/oxide interface during oxidation {ital in} {ital situ} in a transmission electron microscope. Oxidation occurs by the reaction of discrete monolayers with no flow of surface steps. This is in dramatic contrast to oxygen etching of silicon at high temperatures, which is initially also a terrace reaction, but is followed by an evaporative process from steps.

• DOE Contract Number: FG02-91ER45439
• OSTI ID: 7047768
• Journal Information: Physical Review Letters; (United States), Vol. 68:11; ISSN 0031-9007
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
OXIDATION
TRANSMISSION ELECTRON MICROSCOPY
SILICON OXIDES
EXPERIMENTAL DATA
IN-SITU PROCESSING
INTERFACES
REAL TIME SYSTEMS
CHALCOGENIDES
CHEMICAL REACTIONS
DATA
ELECTRON MICROSCOPY
ELEMENTS
INFORMATION
MICROSCOPY
NUMERICAL DATA
OXIDES
OXYGEN COMPOUNDS
PROCESSING
SEMIMETALS
SILICON COMPOUNDS
360604* - Materials- Corrosion
Erosion
& Degradation