skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Electrical and thermal conductivity of beta-BN

Journal Article · · Inorg. Mater. (Engl. Transl.); (United States)
OSTI ID:7034542

This investigation deals with the influence of selenium impurity and thermal annealing on the properties of beta-BN. It is shown that as a result of annealing of cubic boron nitride, undoped or doped with selenium, both electrical and thermal conductivity are increased, depending also on the defects in the beta-BN crystals. The concentration of selenium in boron nitride was obtained by x-ray luminescence methods. To excite the x-ray radiation of selenium, a Cd 109 radioisotope source was used with an integrated activity of approximately 1 MBq.

Research Organization:
Institute of Solid State and Semiconductor physics, Academy of Sciences of the BSSR
OSTI ID:
7034542
Journal Information:
Inorg. Mater. (Engl. Transl.); (United States), Vol. 22:3
Country of Publication:
United States
Language:
English