Vacancy defects in photoexcited GaAs studied by positron two-dimensional angular correlation of annihilation radiation
- Department of Physics, Brookhaven National Laboratory, Upton, New York 11973 (United States)
- Department of Physics, Michigan Technological University, Houghton, Michigan 49931 (United States)
- AT T Bell Laboratories, Murray Hill, New Jersey 07974 (United States)
The positron two-dimensional angular correlation of annihilation radiation (2D-ACAR) technique has been coupled with optical excitation to study the native point defects in semi-insulating GaAs. The As vacancy was observed below [similar to]170 K when illuminated with 1.41[plus minus]0.07 eV photons. The temperature dependence of the 2D-ACAR spectra, with and without illumination, was studied. Data were also collected at 25 K as a function of the intensity of infrared light. The 2D-ACAR spectra reflect the [ital e][sup +]-[ital e][sup [minus]] pair momentum distribution at or near the vacancy and provides symmetry and electronic structure information, which can be used as a unique defect signature for the vacancy.
- DOE Contract Number:
- AC02-76CH00016
- OSTI ID:
- 7016951
- Journal Information:
- Physical Review, B: Condensed Matter; (United States), Vol. 50:15; ISSN 0163-1829
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GALLIUM ARSENIDES
ELECTRONIC STRUCTURE
VACANCIES
ANGULAR CORRELATION
POSITRON DETECTION
RADIATION DETECTION
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0013-0065 K
TEMPERATURE RANGE 0065-0273 K
ARSENIC COMPOUNDS
ARSENIDES
CHARGED PARTICLE DETECTION
CORRELATIONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DETECTION
GALLIUM COMPOUNDS
PNICTIDES
POINT DEFECTS
TEMPERATURE RANGE
360606* - Other Materials- Physical Properties- (1992-)