Field-effect transistor having a superlattice channel and high carrier velocities at high applied fields
A field effect transistor comprises a semiconductor having a source, a drain, a channel and a gate in operational relationship. The semiconductor is a strained layer superlattice comprising alternating quantum well and barrier layers, the quantum well layers and barrier layers being selected from the group of layer pairs consisting of InGaAs/AlGaAs, InAs/InAlGaAs, and InAs/InAlAsP. The layer thicknesses of the quantum well and barrier layers are sufficiently thin that the alternating layers constitute a superlattice which has a superlattice conduction band energy level structure in k-vector space. The layer thicknesses of the quantum well layers are selected to provide a superlattice L/sub 2D/-valley which has a shape which is substantially more two-dimensional than that of said bulk L-valley. 2 figs.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- DOE Contract Number:
- AC04-76DP00789
- Assignee:
- SNL; ERA-14-001156; EDB-88-184977
- Patent Number(s):
- PATENTS-US-A6059365
- OSTI ID:
- 7014915
- Resource Relation:
- Other Information: Portions of this document are illegible in microfiche products
- Country of Publication:
- United States
- Language:
- English
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Field-effect transistor having a superlattice channel and high carrier velocities at high applied fields
Field-effect transistor having a superlattice channel and high carrier velocities at high applied fields
Related Subjects
42 ENGINEERING
ALUMINIUM ARSENIDES
SUPERLATTICES
GALLIUM ARSENIDES
INDIUM ARSENIDES
ELECTRON-HOLE COUPLING
ELECTRONIC STRUCTURE
FIELD EFFECT TRANSISTORS
INVENTIONS
LAYERS
SEMICONDUCTOR DEVICES
VELOCITY
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
PNICTIDES
TRANSISTORS
360602* - Other Materials- Structure & Phase Studies
420800 - Engineering- Electronic Circuits & Devices- (-1989)