Cathodic deposition of amorphous alloys of silicon, carbon, and fluorine

Journal Article · Sat May 01 00:00:00 EDT 1982 · J. Electrochem. Soc.; (United States)

DOI:https://doi.org/10.1149/1.2124069· OSTI ID:7012192

Lee, C H; Kroger, F A

Amorphous silicon containing fluorine and carbon, pure and doped with boron or phosphorus, was deposited cathodically from solutions of K/sub 2/SiF/sub 6/ in acetone with HF. The conditions for optimum deposition were determined, and the deposits were characterized by electron microprobe x-ray emission, electrical conductivity, and infrared absorption. Doping with phosphorus causes a change from p- to n-type semiconductor behavior, with a maximum of resistivity >10/sup 13/ /OMEGA/ cm at the compensation point. 48 refs.

• Research Organization: Univ of South Calif, Los Angeles, USA
• OSTI ID: 7012192
• Journal Information: J. Electrochem. Soc.; (United States), Vol. 129:5
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
SILICON ALLOYS
ELECTRODEPOSITION
AMORPHOUS STATE
BORON ADDITIONS
CARBON ADDITIONS
CRYSTAL DOPING
ELECTRIC CONDUCTIVITY
FABRICATION
FLUORINE ADDITIONS
HYDROFLUORIC ACID
INFRARED SPECTRA
PHOSPHORUS ADDITIONS
SILICON SOLAR CELLS
ALLOYS
BORON ALLOYS
DEPOSITION
DIRECT ENERGY CONVERTERS
ELECTRICAL PROPERTIES
ELECTROLYSIS
EQUIPMENT
HYDROGEN COMPOUNDS
INORGANIC ACIDS
LYSIS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SOLAR CELLS
SOLAR EQUIPMENT
SPECTRA
SURFACE COATING
140501* - Solar Energy Conversion- Photovoltaic Conversion
360601 - Other Materials- Preparation & Manufacture