Deep level transient spectroscopy in resistive layers

Technical Report · Thu Jun 01 00:00:00 EDT 1989

OSTI ID:7007904

Hunt, C. E.; Ng, Kim ^[1]

---

1. California Univ., Davis, CA (USA). Dept. of Electrical and Computer Engineering

This work investigates the application of the Deep Level Transient Spectroscopy (DLTS) technique to resistive semiconductor thin films, such as Silicon-On-Insulator (SOI) and thin layer of GaAs formed on semi-insulating material. Schottky diodes made on these materials were used in this study. The effect of the series resistance inherent in these types of thin-film test structures on the interpretation of data obtained from the measurement apparatus is discussed. It is observed that inverted DLTS signals occur in these structures because of the high series resistance. It is shown that ignoring this effect can lead to erroneous values of the activation energy and the density of traps. 2 refs.

• Research Organization: Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
• Sponsoring Organization: DOE/DP
• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 7007904
• Report Number(s): UCRL-21268; ON: DE90008349
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SEMICONDUCTOR MATERIALS
MATERIALS TESTING
CAPACITANCE
CURRENT DENSITY
DATA PROCESSING
DOPED MATERIALS
ELECTRON SPECTROSCOPY
GALLIUM ARSENIDES
SAMPLING
SCHOTTKY BARRIER DIODES
TEMPERATURE EFFECTS
THIN FILMS
TRANSIENTS
TRAPPING
ARSENIC COMPOUNDS
ARSENIDES
ELECTRICAL PROPERTIES
FILMS
GALLIUM COMPOUNDS
MATERIALS
PHYSICAL PROPERTIES
PNICTIDES
PROCESSING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SPECTROSCOPY
TESTING
360603* - Materials- Properties
360601 - Other Materials- Preparation & Manufacture
360602 - Other Materials- Structure & Phase Studies