Fermi level dependent native defect formation: Consequences for metal--semiconductor and semiconductor--semiconductor interfaces

Journal Article · Fri Jul 01 00:00:00 EDT 1988 · J. Vac. Sci. Technol., B; (United States)

DOI:https://doi.org/10.1116/1.584246· OSTI ID:7004295

Walukiewicz, W

The amphoteric native defect model of the Schottky barrier formation is used to analyze the Fermi level pinning at metal/semiconductor interfaces for submonolayer metal coverages. It is assumed that the energy required for defect generation is released in the process of surface back-relaxation. Model calculations for metal/GaAs interfaces show a weak dependence of the Fermi level pinning on the thickness of metal deposited at room temperature. This weak dependence indicates a strong dependence of the defect formation energy on the Fermi level, a unique feature of amphoteric native defects. This result is in very good agreement with experimental data. It is shown that a very distinct asymmetry in the Fermi level pinning on p- and n-type GaAs observed at liquid nitrogen temperatures can be understood in terms of much different recombination rates for amphoteric native defects in those two types of materials. Also, it is demonstrated that the Fermi level stabilization energy, a central concept of the amphoteric defect system, plays a fundamental role in other phenomena in semiconductors such as semiconductor/semiconductor heterointerface intermixing and saturation of free carrier concentration.

• Research Organization: Center for Advanced Materials, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720
• OSTI ID: 7004295
• Journal Information: J. Vac. Sci. Technol., B; (United States), Vol. 6:4
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
CRYSTAL DEFECTS
ELECTRIC CONTACTS
FERMI LEVEL
INTERFACES
MIXING
SATURATION
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL STRUCTURE
ELECTRICAL EQUIPMENT
ENERGY LEVELS
EQUIPMENT
GALLIUM COMPOUNDS
PNICTIDES
360603* - Materials- Properties
360602 - Other Materials- Structure & Phase Studies