Interpretation of infrared data in neutron-irradiated silicon

Journal Article · Sat Oct 15 00:00:00 EDT 1994 · Physical Review, B: Condensed Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.50.11531· OSTI ID:7002461

Londos, C A; Georgiou, G I; Fytros, L G ^[1]; Papastergiou, K ^[2]

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1. Physics Department, Solid State Section, University of Athens, Panepistimiopolis, Zografos, Athens 157 84 (Greece)
2. Institute of Nuclear Technology-Radiation Protection, National Centre of Scientific Research Demokritos,'' Agia Paraskevi, Attikis, Athens 153 10 (Greece)

Czochralski-grown Si samples were irradiated by fast neutrons, at room temperature, with the aim of studying the identity of the defects produced, using infrared spectroscopy. Two localized vibrational modes at 914 and 1000 cm[sup [minus]1] were considered as intermediate defect stages between VO and VO[sub 2] complexes. We express the view that they may arise from a [VO+O[sub [ital i]]] defect where an interstitial oxygen atom is trapped near a VO pair. Another two peaks at 1032 and 1043 cm[sup [minus]1] were attributed to the VO[sub 4] defect and a tentative model of its structure is presented.

• OSTI ID: 7002461
• Journal Information: Physical Review, B: Condensed Matter; (United States), Vol. 50:16; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
FAST NEUTRONS
CRYSTAL DEFECTS
SILICON
CZOCHRALSKI METHOD
IRRADIATION
AMBIENT TEMPERATURE
INFRARED SPECTRA
RADIATION EFFECTS
BARYONS
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
ELEMENTARY PARTICLES
ELEMENTS
FERMIONS
HADRONS
NEUTRONS
NUCLEONS
SEMIMETALS
SPECTRA
665300* - Interactions Between Beams & Condensed Matter- (1992-)