Radiation characterization of a C256 EEPROM

Conference · Fri Dec 01 00:00:00 EST 1989 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)

DOI:https://doi.org/10.1109/23.45431· OSTI ID:7002186

Wrobel, T F ^[1]

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1. Sandia National Labs., Albuquerque, NM (US)

Total dose, dose-rate and high dose-rate memory retention results are presented for the SEEQ Technologies Inc., 28C256 floating gate electrically erasable programmable read only memory (EEPROM). Total dose failure levels are mode dependent, i.e. {approximately}33 krad(Si) for reading and {approximately}9.5 krad(Si) for writing. The write-mode failure level is dose-rated dependent, increasing from {approximately}10 krad(Si) at {approximately}11 rad(Si)/s to {approximately} 28 krad(Si) at dose rates {approximately}0,1 rad(Si)/s Average upset and latch-up thresholds are 3.8 {times} 10{sup 8} rad(Si)/s and 7.7 {times} 10{sup 8} rad(Si)/s respectively. No latch-up windows were observed. Memory contents were retained following exposure up to 108 krad (Si) and following 1 {times} 10{sup 12} rad(Si)/s.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 7002186
• Report Number(s): CONF-890723-; CODEN: IETNA; TRN: 90-014116
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Vol. 36:6; Conference: 26. annual conference on nuclear and space radiation effects, Marco Island, FL (USA), 25-29 Jul 1989; ISSN 0018-9499
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
36 MATERIALS SCIENCE
MEMORY DEVICES
RADIATION HARDENING
SILICON
DOSE RATES
RADIATION DOSES
DOSES
ELEMENTS
HARDENING
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMIMETALS
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems
360605 - Materials- Radiation Effects