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Title: Preparation and properties of Sb[sub 2]S[sub 3] thin films for photoelectrochemical applications

Journal Article · · Journal of the Electrochemical Society; (United States)
DOI:https://doi.org/10.1149/1.2055004· OSTI ID:6994531
; ; ;  [1];  [2]
  1. Shivaji Univ., Solapur (India). Dept. of Physics
  2. Walchand College of Arts and Science, Solapur (India)

A modified chemical deposition process has been employed for the preparation of antimony trisulfide thin layers onto the plane glass and stainless steel substrates. The as-deposited samples on baking at 120 C are orange-red in color and turn into the dark gray variety on heating to 200 C in an air ambient. The surface topography shows the polycrystalline nature of the samples. This is supported by x-ray diffraction observations. The deposits are of n-type with an electron activation energy of 0.80 eV. A n-Sb[sub 2]S[sub 3]/ferrocene-DMSO/C, photoelectrochemical cell was then devised and has been characterized in dark and in light in terms of electrical and optical properties. A short-circuit current (I[sub sc]) of 0.14 mA/cm[sup 2] and an open-circuit voltage (V[sub oc]) equal to 0.155 V are obtained form this cell configuration. The calculated efficiency approached to 0.008%. The other cell parameters have been determined from these studies.

OSTI ID:
6994531
Journal Information:
Journal of the Electrochemical Society; (United States), Vol. 141:7; ISSN 0013-4651
Country of Publication:
United States
Language:
English