Strain-induced lateral confinement of excitons in GaAs-AlGaAs quantum well microstructures
Journal Article
·
· Appl. Phys. Lett.; (United States)
We report evidence for lateral confinement of excitons within a continuous two-dimensional GaAs-AlGaAs quantum well. The confinement to ''wires'' within the well was produced by partially etching a pattern through the upper AlGaAs barrier. We propose a new mechanism, that of patterned strain, for lateral quantum confinement of carriers in semiconductor microstructures, to explain our results.
- Research Organization:
- Bell Communications Research, Red Bank, New Jersey 07701
- OSTI ID:
- 6978467
- Journal Information:
- Appl. Phys. Lett.; (United States), Vol. 53:9
- Country of Publication:
- United States
- Language:
- English
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