Punch-through characteristics of FOXFET biased detectors

Conference · Mon Aug 01 00:00:00 EDT 1994 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:6974807

Bacchetta, N; Da Ros, R; Giraldo, A; Gotra, Yu ^[1]; Bisello, D; Verzellesi, G ^[2]; Paccagnella, A ^[3]

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1. INFN, Padova (Italy)
2. INFN, Padova (Italy) Univ. di Padova (Italy)
3. INFN, Padova (Italy) Univ. di Cagliari (Italy). Istituto di Elettrotecnica

The main punch-through characteristics have been studied on Field OXide FETs (FOXFETs) used for microstrip biasing in Si detectors. The voltage-current DC curves have been studied on devices with different channel width/length ratios, fabricated on Si substrates with different doping levels. The punch-through threshold voltage depends on the positive charge in the gate oxide, device layout and temperature. The relation between punch-through current and dynamic resistance is insensitive to charge accumulation in the gate oxide induced by irradiation and to different Si donor doping levels. Dynamic resistance however varies as the doping changes from n- to p-type, and it also depends on the Si bulk damage induced by neutron irradiation. The AC impedance will reproduce the DC dynamic resistance, but show also large effects due to parasitic capacitance, which dominates the FOXFET response at high frequency and can affect the detector performance.

• OSTI ID: 6974807
• Report Number(s): CONF-931051-; CODEN: IETNAE; TRN: 94-023044
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Vol. 41:4Pt1; Conference: NSS-MIC '93: nuclear science symposium and medical imaging conference, San Francisco, CA (United States), 30 Oct - 6 Nov 1993; ISSN 0018-9499
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
SI SEMICONDUCTOR DETECTORS
ELECTRICAL PROPERTIES
PERFORMANCE
PHYSICAL RADIATION EFFECTS
DOPED MATERIALS
ELECTRIC POTENTIAL
FIELD EFFECT TRANSISTORS
MATERIALS
MEASURING INSTRUMENTS
PHYSICAL PROPERTIES
RADIATION DETECTORS
RADIATION EFFECTS
SEMICONDUCTOR DETECTORS
SEMICONDUCTOR DEVICES
TRANSISTORS
440101* - Radiation Instrumentation- General Detectors or Monitors & Radiometric Instruments
440200 - Radiation Effects on Instrument Components
Instruments
or Electronic Systems