Gamma radiation response of MWIR and LWIR HgCdTe photodiodes

Conference · Tue Dec 01 00:00:00 EST 1987 · IEEE Trans. Nucl. Sci.; (United States)

OSTI ID:6973307

Williams, G M; Vanderwyck, A H.B.; Blazejewski, E R; Ginn, R P; Li, C C; Nelson, S J

This paper describes the results of experimental investigation of the gamma radiation response of HgCdTe photodiodes. The devices were fabricated in material grown by liquid phase epitaxy; the p-n junctions were made by ion implantation and passivated with ZnS. The MWIR devices tested at 120K, showed transient response in reasonable agreement with existing theory and total dose hardness greater than 1 Mrad(Si). The LWIR detectors, tested at 40K, showed a degradation threshold at 1- Krad(H/sub 2/O). This degradation is not a result of surface inversion resulting from charge trapping in the insulator.

• Research Organization: Rockwell International Science Center (US)
• OSTI ID: 6973307
• Report Number(s): CONF-8707112-; TRN: 88-023541
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Vol. NS-34:6; Conference: Annual conference on nuclear and space radiation effects, Snowmass Village, CO, USA, 28 Jul 1987
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
CADMIUM TELLURIDES
PHYSICAL RADIATION EFFECTS
JUNCTION TRANSISTORS
MERCURY ALLOYS
CHARGED-PARTICLE TRANSPORT
EXPERIMENTAL DATA
FABRICATION
GAMMA RADIATION
ION CHANNELING
LIQUID PHASE EPITAXY
PHOTODIODES
RADIATION CURING
TRAPPING
ALLOYS
CADMIUM COMPOUNDS
CHALCOGENIDES
CHANNELING
CHEMICAL RADIATION EFFECTS
CHEMISTRY
CURING
DATA
ELECTROMAGNETIC RADIATION
EPITAXY
INFORMATION
IONIZING RADIATIONS
NUMERICAL DATA
RADIATION CHEMISTRY
RADIATION EFFECTS
RADIATION TRANSPORT
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
TELLURIDES
TELLURIUM COMPOUNDS
TRANSISTORS
420800* - Engineering- Electronic Circuits & Devices- (-1989)